AZZURRO Semiconductors AG was founded in 2003 as a spin-off of the Otto-von-Guericke University, Magdeburg, Germany to commercialize gallium nitride (GaN)-on-silicon (Si) epi-wafers. AZZURRO secured its initial funding in November 2004 and had its first reactor up and running by August 2005. The company has secured approximately 7M euros in funding to date and is currently seeking additional funding to purchase more reactors and scale operations. The company has roughly 20 employees.
GaN-based products such as white, blue and green LEDs are already used in everyday lighting applications such as display backlighting, traffic lights and general lighting applications. Other upcoming applications are efficient switching devices for power supplies and (hybrid) electric vehicles where GaN benefits from its high-voltage breakdown properties.
AZZURRO is a pure-play epi-foundry specializing in large-diameter GaN-on-Si epi-wafers. AZZURRO’s GaN-on-Si epi-wafers combine the unique properties of GaN with the cost advantages of growth on silicon (Si) substrates.
AZZURRO has pioneered metal-organic vapor phase epitaxy (MOVPE) growth of gallium nitride (GaN) device structures on silicon substrates. AZZURRO argues that it was the first company to show thick, crack-free GaN layers on Si on 150 mm wafers in 2005.
The company’s crack-free GaN-on-Si is available in thicknesses of 6-um and above, enabling exceptional crystal quality and device performance. Wafer curvature control systems and extensive characterization capabilities enable AZZURRO to achieve thick layer, homogeneous, large diameter and – differentiating itself from competitors – flat wafers with very low bow values.
The company focuses on GaN-on-Si for use in LED applications and high voltage electronics for automotive and switching devices for power supplies. The primary target market is LEDs, where GaN-on-Si is poised to replace GaN on sapphire, which is roughly 99% of the market today.
Silicon is less expensive than sapphire and allows easier substrate removal for thin-film LEDs. AZZURRO’s technology enables large diameter GaN-on-Si wafers that are flat, or can even have a customer-specific curvature using Azzuro’s strain control technology. By moving to large area GaN-on-Si wafers, the LED industry can achieve cost-savings of up to a factor of five.
For high-voltage applications (>600V), GaN-on-Si is poised to replace traditional silicon-based FETs and diodes and even IGBTs. As GaN-based devices require just 1/10th the area of traditional silicon devices they not only offer performance advantages but also massive cost savings.
A number of industry efforts have focused on producing GaN-on-Si wafers. Nitronex has a GaN-on-Si process focused on delivering RF power transistors. Imec has also presents a new GaN-on-Si architecture. AZZURRO believes it is the only company delivering thick, crack-free GaN-layers on large diameter, flat wafers in volume.
To demonstrate that GaN-on-Si is not just a university experiment, AZZURRO has licensed its technology to Osram Opto Semiconductors. Osram has a non-exclusive license to AZZURRO’s GaN-on-Si process technology for LED applications and exclusivity for the technology transfer until November 7, 2010.
This represents AZZURRO’s only licensing deal to date. The company is in the business of manufacturing and delivering GaN-on-Si epi-wafers and will be procuring additional reactors to scale capacity. The company is engaged with major semiconductor companies worldwide, but keeps relationships with customer confidential.
Erwin Wolf, CEO (previously VP Technology, Infineon, CEO at Infineon Fiber Optics and CEO at Osram Opto Semiconductors)
Alexander Lösing, co-founder, CFO & EVP Sales (previously working in venture capital and business development)
Dr. Markus Sickmöller, VP Operations (previously Senior Director Production at Qimonda Taiwan, assigned to Inotera Memories, and VP Frontend Technology)
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