4DS was founded to develop non-volatile semiconductor memory offering high capacity, high performance and low cost. 4DS, Inc. is a US corporation located in Fremont, California and is a subsidiary of 4D-S Pty Ltd, an Australian Corporation.

4DS has developed Resistive Random Access Memory (RRAM), a non-volatile memory that can be made using significantly fewer manufacturing mask steps than comparable memory technologies. RRAM exhibits the density of FLASH memory with the speed of DRAM, and is manufactured using a proprietary process that can easily be ported into existing semiconductor fabs.

RRAM is a high-capacity, non-volatile memory with fast switching speeds measured below 5ns, and with an endurance of 1 billion write/read cycles. RRAM exhibits lower programming currents than PRAM or MRAM without sacrificing programming performance, retention or endurance.

Compared to PRAM, RRAM operates at a faster timescale, while compared to MRAM, it has a simpler, smaller cell structure (MRAM = 16F2, 4DS = 4F2). Compared to FLASH Memory and Racetrack Memory, RRAM requires lower voltages and lower currents and enabling the use in low power applications.

4DS is actively seeking partners to produce its memory.

Kurt Pfluger, CEO (co-founder of Apogee Power, founder and CEO of IN Electronics, and Managing Director for PartMiner’s Silicon Valley division)

Dan Brors, Director of Engineering (formerly sold a DRAM technology company, Torrex, to Varian Semiconductor)

Lee Cleveland, Director of Product Development (formerly Director of Memory Design at AMD and VP of Engineering at Sipex)

3155 Skyway Court
Fremont, CA 94539
Tel: 510.438.9945
Fax: 510.438.9311